2SA854STPR
- Mfr.Part #
- 2SA854STPR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-72 Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.5A SPT
- Stock
- 12,275
- In Stock :
- 12,275
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 600mV
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- JESD-609 Code :
- e1
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Terminal Finish :
- TIN SILVER COPPER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Current Rating :
- -500mA
- Packaging :
- Tape and Box (TB)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 32V
- Current - Collector (Ic) (Max) :
- 500mA
- Transition Frequency :
- 200MHz
- Number of Elements :
- 1
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 200MHz
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 180
- Mount :
- Through Hole
- Voltage - Rated DC :
- -32V
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 40V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Max Power Dissipation :
- 300mW
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Pin Count :
- 3
- Number of Terminations :
- 3
- HTS Code :
- 8541.21.00.75
- Package / Case :
- SC-72 Formed Leads
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 50mA, 500mA
- Published :
- 2004
- Max Collector Current :
- 500mA
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- 2SA854STPR

PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP SC-72 Formed Leads Tape & Box (TB) Through Hole
2SA854STPR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 100mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.During maximum operation, collector current can be as low as 500mA volts.
2SA854STPR Features
the DC current gain for this device is 180 @ 100mA 3V
the vce saturation(Max) is 600mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 200MHz
2SA854STPR Applications
There are a lot of ROHM Semiconductor
2SA854STPR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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