2SA854STPR
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- Mfr.Part #
- 2SA854STPR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-72 Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.5A SPT
- Stock
- 12,275
- In Stock ：
- 12,275
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 50mA, 500mA
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 200MHz
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Packaging :
- Tape and Box (TB)
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 200MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SC-72 Formed Leads
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 600mV
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 10
- JESD-609 Code :
- e1
- Max Collector Current :
- 500mA
- Collector Base Voltage (VCBO) :
- 40V
- HTS Code :
- 8541.21.00.75
- Current Rating :
- -500mA
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 180
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- -32V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Max Power Dissipation :
- 300mW
- Published :
- 2004
- Collector Emitter Breakdown Voltage :
- 32V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Current - Collector (Ic) (Max) :
- 500mA
- Mount :
- Through Hole
- Terminal Finish :
- TIN SILVER COPPER
- Datasheets
- 2SA854STPR
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP SC-72 Formed Leads Tape & Box (TB) Through Hole
2SA854STPR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 100mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.During maximum operation, collector current can be as low as 500mA volts.
2SA854STPR Features
the DC current gain for this device is 180 @ 100mA 3V
the vce saturation(Max) is 600mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 200MHz
2SA854STPR Applications
There are a lot of ROHM Semiconductor
2SA854STPR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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