2SA812B-T1B-AT
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- Mfr.Part #
- 2SA812B-T1B-AT
- Manufacturer
- Renesas Electronics Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- 2SA812B-T1B-AT - PNP SILICON EPI
- Stock
- 1,701
- In Stock ：
- 1,701
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- Manufacturer :
- Renesas Electronics Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Operating Temperature :
- 150°C (TJ)
- Series :
- -
- Frequency - Transition :
- 180MHz
- Current - Collector (Ic) (Max) :
- 100 mA
- Product Status :
- Obsolete
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Power - Max :
- 200 mW
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 90 @ 1mA, 6V
- Supplier Device Package :
- 3-MINIMOLD
- Package :
- Bulk
- Datasheets
- 2SA812B-T1B-AT
PNP 150°C (TJ) 100nA (ICBO) TO-236-3, SC-59, SOT-23-3 Surface Mount
2SA812B-T1B-AT Overview
In this device, the DC current gain is 90 @ 1mA, 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.Product comes in the supplier's device package 3-MINIMOLD.There is a 50 V maximal voltage in the device due to collector-emitter breakdown.
2SA812B-T1B-AT Features
the DC current gain for this device is 90 @ 1mA, 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the supplier device package of 3-MINIMOLD
2SA812B-T1B-AT Applications
There are a lot of Renesas
2SA812B-T1B-AT applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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