2SA2154MFV-GR(TPL3
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- Mfr.Part #
- 2SA2154MFV-GR(TPL3
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A VESM
- Stock
- 7,713
- In Stock ：
- 7,713
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 50V
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 300mV
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Max Collector Current :
- 150mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Cut Tape (CT)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Reach Compliance Code :
- Unknown
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 11 Weeks
- Transistor Type :
- PNP
- Published :
- 2014
- RoHS Status :
- RoHS Compliant
- Max Power Dissipation :
- 150mW
- Power - Max :
- 150mW
- hFE Min :
- 200
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- -5V
- Transition Frequency :
- 80MHz
- Package / Case :
- SOT-723
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Collector Base Voltage (VCBO) :
- -50V
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 80MHz
- Datasheets
- 2SA2154MFV-GR(TPL3
PNP 150°C TJ 100nA ICBO PNP SOT-723 Cut Tape (CT) Surface Mount
2SA2154MFV-GR(TPL3 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 6V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 80MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 150mA volts.
2SA2154MFV-GR(TPL3 Features
the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 80MHz
2SA2154MFV-GR(TPL3 Applications
There are a lot of Toshiba Semiconductor and Storage
2SA2154MFV-GR(TPL3 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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