2SA2016-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

9 Weeks

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

6V

Published :

2012

Number of Terminations :

3

Case Connection :

COLLECTOR

Gain Bandwidth Product :

330MHz

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

50V

Max Breakdown Voltage :

50V

Transistor Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Power Dissipation :

1.3W

Surface Mount :

yes

Max Power Dissipation :

3.5W

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Max Collector Current :

7A

Power - Max :

3.5W

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

50V

Polarity/Channel Type :

PNP

Package / Case :

TO-243AA

Number of Pins :

3

JESD-609 Code :

e6

Collector Emitter Saturation Voltage :

240mV

Pin Count :

3

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Number of Elements :

1

Configuration :

Single

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

400mV @ 40mA, 2A

Operating Temperature :

150°C TJ

hFE Min :

200

Reach Compliance Code :

not_compliant

Lead Free :

Lead Free

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Transition Frequency :

290MHz