2SA2012-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

3

Collector Emitter Breakdown Voltage :

30V

Max Power Dissipation :

3.5W

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Terminal Position :

Single

Max Collector Current :

5A

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

30V

Terminal Form :

Flat

Pbfree Code :

yes

Max Frequency :

1MHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

PNP

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

9 Weeks

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Finish :

Tin/Bismuth (Sn/Bi)

JESD-609 Code :

e6

Case Connection :

COLLECTOR

Vce Saturation (Max) @ Ib, Ic :

210mV @ 30mA, 1.5A

Transition Frequency :

350MHz

Length :

4.5mm

Width :

2.5mm

Number of Pins :

3

Emitter Base Voltage (VEBO) :

5V

Number of Terminations :

3

Transistor Type :

PNP

Frequency - Transition :

420MHz

Published :

2010

Package / Case :

TO-243AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

30V

Height :

1.5mm

Number of Elements :

1

Collector Emitter Saturation Voltage :

-260mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Configuration :

Single

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON