2SA2012-TD-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

350MHz

Number of Elements :

1

Package / Case :

TO-243AA

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Length :

4.5mm

Height :

1.5mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Base Voltage (VCBO) :

30V

Terminal Position :

Single

Operating Temperature :

150°C TJ

Factory Lead Time :

9 Weeks

Max Frequency :

1MHz

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

-260mV

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Emitter Base Voltage (VEBO) :

5V

Reach Compliance Code :

not_compliant

Frequency - Transition :

420MHz

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

210mV @ 30mA, 1.5A

Pin Count :

3

Collector Emitter Voltage (VCEO) :

30V

Terminal Form :

Flat

Published :

2010

Configuration :

Single

JESD-609 Code :

e6

Lead Free :

Lead Free

Number of Pins :

3

Surface Mount :

yes

Polarity/Channel Type :

PNP

Width :

2.5mm

Transistor Element Material :

SILICON

Number of Terminations :

3

Max Collector Current :

5A

Transistor Type :

PNP

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

100nA ICBO

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Max Power Dissipation :

3.5W