2PD602ASL,215
- Mfr.Part #
- 2PD602ASL,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A TO236AB
- Stock
- 103
- In Stock :
- 103
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Max Breakdown Voltage :
- 50V
- Transition Frequency :
- 180MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 250mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 500mA
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Frequency :
- 180MHz
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- hFE Min :
- 40
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 150mA 10V
- Series :
- Automotive, AEC-Q101
- Gain Bandwidth Product :
- 180MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 250mW
- Collector Emitter Breakdown Voltage :
- 50V
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Base Part Number :
- 2PD602
- Number of Elements :
- 1
- Published :
- 2008
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Datasheets
- 2PD602ASL,215

NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PD602ASL,215 Overview
In this device, the DC current gain is 170 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 30mA, 300mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.180MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
2PD602ASL,215 Features
the DC current gain for this device is 170 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
2PD602ASL,215 Applications
There are a lot of Nexperia USA Inc.
2PD602ASL,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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