2PD601ART,235
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- Mfr.Part #
- 2PD601ART,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO236AB
- Stock
- 12,129
- In Stock ：
- 12,129
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Power Dissipation :
- 250mW
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- Series :
- Automotive, AEC-Q101
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Published :
- 2007
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- 2PD601A
- Number of Elements :
- 1
- Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 60V
- Contact Plating :
- Tin
- Pin Count :
- 3
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Max Power Dissipation :
- 250mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 50V
- Datasheets
- 2PD601ART,235
2PD601ART,235 Documents
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PD601ART,235 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 210 @ 2mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
2PD601ART,235 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2PD601ART,235 Applications
There are a lot of Nexperia USA Inc.
2PD601ART,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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