2PD601ART,235
- Mfr.Part #
- 2PD601ART,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO236AB
- Stock
- 12,129
- In Stock :
- 12,129
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 6V
- Power Dissipation :
- 250mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Series :
- Automotive, AEC-Q101
- Published :
- 2007
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Max Collector Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Max Power Dissipation :
- 250mW
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Base Part Number :
- 2PD601A
- Collector Emitter Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Datasheets
- 2PD601ART,235

NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PD601ART,235 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 210 @ 2mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
2PD601ART,235 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2PD601ART,235 Applications
There are a lot of Nexperia USA Inc.
2PD601ART,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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