2PD601ART,215
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- Mfr.Part #
- 2PD601ART,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO236AB
- Stock
- 1,483
- In Stock ：
- 1,483
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 250mW
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 100MHz
- Collector Base Voltage (VCBO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Length :
- 3mm
- Emitter Base Voltage (VEBO) :
- 6V
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Published :
- 2005
- Collector Emitter Voltage (VCEO) :
- 50V
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Base Part Number :
- 2PD601A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 250mV
- hFE Min :
- 90
- Max Power Dissipation :
- 250mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Height :
- 1mm
- Width :
- 1.4mm
- Max Breakdown Voltage :
- 50V
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Max Collector Current :
- 100mA
- Lead Free :
- Lead Free
- Datasheets
- 2PD601ART,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PD601ART,215 Overview
In this device, the DC current gain is 210 @ 2mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
2PD601ART,215 Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2PD601ART,215 Applications
There are a lot of Nexperia USA Inc.
2PD601ART,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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