2PD601AS,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

HTS Code :

8541.21.00.95

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Configuration :

Single

Frequency - Transition :

100MHz

Number of Terminations :

3

Pin Count :

3

Surface Mount :

yes

Terminal Finish :

Tin

Terminal Position :

Dual

VCEsat-Max :

0.5 V

Polarity/Channel Type :

NPN

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

290 @ 2mA 10V

Transition Frequency :

100MHz

Transistor Element Material :

SILICON

Published :

2009

Base Part Number :

2PD601A

JESD-609 Code :

e3

Transistor Type :

NPN

Current - Collector Cutoff (Max) :

10nA ICBO

Current - Collector (Ic) (Max) :

100mA

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Voltage - Collector Emitter Breakdown (Max) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G3

Mounting Type :

Surface Mount

Power - Max :

250mW

Qualification Status :

Not Qualified

Collector-Base Capacitance-Max :

3.5pF

Number of Elements :

1

JEDEC-95 Code :

TO-236AB

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40