2PD602AS,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

170 @ 150mA 10V

Polarity/Channel Type :

NPN

Base Part Number :

2PD602

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Power - Max :

250mW

Number of Elements :

1

Pin Count :

3

Number of Terminations :

3

Transition Frequency :

180MHz

Published :

2009

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

10nA ICBO

Mounting Type :

Surface Mount

Current - Collector (Ic) (Max) :

500mA

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G3

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Surface Mount :

yes

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Operating Temperature :

150°C TJ

Voltage - Collector Emitter Breakdown (Max) :

50V

Transistor Type :

NPN

Frequency - Transition :

180MHz

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

600mV @ 30mA, 300mA

HTS Code :

8541.21.00.75

Terminal Finish :

Tin

Packaging :

Tape and Reel (TR)

Collector-Base Capacitance-Max :

15pF

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

VCEsat-Max :

0.6 V