2PD601ASW,115
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- Mfr.Part #
- 2PD601ASW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA 2PD601ASW - SMALL S
- Stock
- 13,362
- In Stock ：
- 13,362
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- hFE Min :
- 290
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 290 @ 2mA 10V
- ECCN Code :
- EAR99
- Max Collector Current :
- 100mA
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Base Part Number :
- 2PD601A
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Published :
- 2009
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Package / Case :
- SC-70, SOT-323
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 200mW
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Series :
- Automotive, AEC-Q101
- Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 200mW
- Factory Lead Time :
- 4 Weeks
- Datasheets
- 2PD601ASW,115
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PD601ASW,115 Overview
In this device, the DC current gain is 290 @ 2mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
2PD601ASW,115 Features
the DC current gain for this device is 290 @ 2mA 10V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2PD601ASW,115 Applications
There are a lot of Nexperia USA Inc.
2PD601ASW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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