2PD601ASW,115
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- Mfr.Part #
- 2PD601ASW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SOT323
- Stock
- 16,875
- In Stock ：
- 16,875
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 50V
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Type :
- NPN
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Published :
- 2009
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 290 @ 2mA 10V
- Max Power Dissipation :
- 200mW
- Base Part Number :
- 2PD601A
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Breakdown Voltage :
- 50V
- Element Configuration :
- Single
- Package / Case :
- SC-70, SOT-323
- hFE Min :
- 290
- Series :
- Automotive, AEC-Q101
- JESD-609 Code :
- e3
- Power Dissipation :
- 200mW
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- 2PD601ASW,115
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PD601ASW,115 Overview
In this device, the DC current gain is 290 @ 2mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
2PD601ASW,115 Features
the DC current gain for this device is 290 @ 2mA 10V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2PD601ASW,115 Applications
There are a lot of Nexperia USA Inc.
2PD601ASW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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