2N7051_D10Z
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- Mfr.Part #
- 2N7051_D10Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 1.5A TO92-3
- Stock
- 24,518
- In Stock ：
- 24,518
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 5V
- Transistor Type :
- NPN - Darlington
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max) :
- 200nA
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- 2N7051
- Supplier Device Package :
- TO-92-3
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector (Ic) (Max) :
- 1.5A
- Frequency - Transition :
- 200MHz
- Datasheets
- 2N7051_D10Z
NPN - Darlington -55°C~150°C TJ 200nA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N7051_D10Z Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 1A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.TO-92-3 is the supplier device package for this product.This device displays a 100V maximum voltage - Collector Emitter Breakdown.
2N7051_D10Z Features
the DC current gain for this device is 1000 @ 1A 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the supplier device package of TO-92-3
2N7051_D10Z Applications
There are a lot of ON Semiconductor
2N7051_D10Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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