2N7002VC-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Package / Case :

SOT-563, SOT-666

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Weight :

3.005049mg

Height :

600μm

Drain to Source Voltage (Vdss) :

60V

JESD-609 Code :

e3

Turn-Off Delay Time :

50 ns

Number of Terminations :

6

Feedback Cap-Max (Crss) :

5 pF

RoHS Status :

ROHS3 Compliant

Power Dissipation :

150mW

Number of Elements :

2

Additional Feature :

High Reliability

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 50mA, 5V

Number of Pins :

6

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

60V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Dual

FET Feature :

Standard

Max Power Dissipation :

150mW

Published :

2009

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Length :

1.6mm

Factory Lead Time :

16 Weeks

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

50 ns

Mounting Type :

Surface Mount

Terminal Form :

Flat

Continuous Drain Current (ID) :

280mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Contact Plating :

Tin

Lead Free :

Lead Free

Radiation Hardening :

No

ECCN Code :

EAR99

Width :

1.2mm