2N7002V
- Mfr.Part #
- 2N7002V
- Manufacturer
- onsemi
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- MOSFET 2N-CH 60V 280MA SOT563F
- Stock
- 18,947
- In Stock :
- 18,947
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Number of Elements :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Feedback Cap-Max (Crss) :
- 7 pF
- Power Dissipation :
- 250mW
- Resistance :
- 7.5Ohm
- Nominal Vgs :
- 1.76 V
- Factory Lead Time :
- 11 Weeks
- Terminal Form :
- Flat
- Continuous Drain Current (ID) :
- 280mA
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- FET Feature :
- Logic Level Gate
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 50mA, 5V
- Threshold Voltage :
- 1.76V
- Drain to Source Breakdown Voltage :
- 60V
- Published :
- 2008
- Drain to Source Voltage (Vdss) :
- 60V
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 5.85 ns
- Length :
- 1.7mm
- Element Configuration :
- Dual
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 12.5 ns
- Number of Terminations :
- 6
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- JESD-609 Code :
- e3
- Width :
- 1.2mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Weight :
- 32mg
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Radiation Hardening :
- No
- Height :
- 600μm
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 250mW
- Package / Case :
- SOT-563, SOT-666
- FET Type :
- 2 N-Channel (Dual)
- Contact Plating :
- Tin
- Number of Pins :
- 6
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Datasheets
- 2N7002V
2N7002V Documents

2N7002V datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
2N7002V Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout, yielding one of the world's lowest on-resistance and gate charges. They are therefore suitable for the most demanding high-efficiency converters.
2N7002V Features
ESD Protected
Low RDS(on)
Surface Mount Package
2V Prefix for Automotive and Other Applications Requiring Unique
The site and Control Change Requirements; AEC?Q101 Qualified and
PPAP Capable
These Devices are Pb?Free, Halogen Free/BFR Free, and are
RoHS Compliant
2N7002V Applications
Low Side Load Switch
Level Shift Circuits
DC?DC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
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