2N7002V-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Weight :

3.005049mg

Min Breakdown Voltage :

60V

Element Configuration :

Dual

Lead Free :

Lead Free

Radiation Hardening :

No

Turn-Off Delay Time :

20 ns

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

20V

Height :

600μm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Power Dissipation :

150mW

Length :

1.6mm

Number of Channels :

2

Transistor Element Material :

SILICON

FET Feature :

Standard

Number of Elements :

2

Current Rating :

280mA

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

2 N-Channel (Dual)

Peak Reflow Temperature (Cel) :

260

Published :

2004

Pin Count :

6

Terminal Form :

Flat

Feedback Cap-Max (Crss) :

5 pF

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 250μA

JESD-609 Code :

e3

Continuous Drain Current (ID) :

280mA

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 50mA, 5V

Voltage - Rated DC :

60V

Max Power Dissipation :

150mW

RoHS Status :

ROHS3 Compliant

Width :

1.2mm

Pbfree Code :

yes

Resistance :

7.5Ohm

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Additional Feature :

High Reliability

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

6

ECCN Code :

EAR99

Turn On Delay Time :

20 ns

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-563, SOT-666