2N7002K-T1-E3
- Mfr.Part #
- 2N7002K-T1-E3
- Manufacturer
- Vishay
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 300MA SOT23-3
- Stock
- 157,233
- In Stock :
- 157,233
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 60V
- Power Dissipation-Max :
- 350mW Ta
- Resistance :
- 2Ohm
- Turn-Off Delay Time :
- 35 ns
- Turn On Delay Time :
- 25 ns
- Rds On Max :
- 2 Ω
- Continuous Drain Current (ID) :
- 300mA
- Nominal Vgs :
- 2 V
- Width :
- 1.397mm
- Number of Elements :
- 1
- Drain to Source Resistance :
- 2Ohm
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- Published :
- 2016
- Input Capacitance (Ciss) (Max) @ Vds :
- 30pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Series :
- TrenchFET®
- Max Operating Temperature :
- 150°C
- Supplier Device Package :
- SOT-23-3 (TO-236)
- Element Configuration :
- Single
- Height :
- 1.12mm
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 300mA Ta
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- REACH SVHC :
- Unknown
- Power Dissipation :
- 350mW
- Drain to Source Breakdown Voltage :
- 60V
- Input Capacitance :
- 30pF
- Mount :
- Surface Mount
- Weight :
- 1.437803g
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 2Ohm @ 500mA, 10V
- Threshold Voltage :
- 2.5V
- Max Junction Temperature (Tj) :
- 150°C
- Min Operating Temperature :
- -55°C
- Length :
- 3.0226mm
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 0.6nC @ 4.5V
- Datasheets
- 2N7002K-T1-E3

N-Channel Tape & Reel (TR) 2Ohm @ 500mA, 10V ±20V 30pF @ 25V 0.6nC @ 4.5V 60V TO-236-3, SC-59, SOT-23-3
2N7002K-T1-E3 Overview
The maximum input capacitance of this device is 30pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 300mA.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 35 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 2Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
2N7002K-T1-E3 Features
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 2Ohm
a threshold voltage of 2.5V
a 60V drain to source voltage (Vdss)
2N7002K-T1-E3 Applications
There are a lot of Vishay Siliconix
2N7002K-T1-E3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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