2N7002DW L6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2011

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 10V

Drain-source On Resistance-Max :

3Ohm

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

0.3A

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 25V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

3 Ω @ 500mA, 10V

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G6

Current - Continuous Drain (Id) @ 25°C :

300mA

ECCN Code :

EAR99

Number of Terminations :

6

Qualification Status :

Not Qualified

Number of Elements :

2

Power - Max :

500mW

FET Feature :

Logic Level Gate

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Pin Count :

6

Power Dissipation-Max (Abs) :

0.5W

Feedback Cap-Max (Crss) :

3 pF

Transistor Element Material :

SILICON

Series :

OptiMOS™

HTS Code :

8541.21.00.95

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

60V

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Reach Compliance Code :

Compliant

Package / Case :

6-VSSOP, SC-88, SOT-363

Time@Peak Reflow Temperature-Max (s) :

40