2N7002DW
- Mfr.Part #
- 2N7002DW
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET 2N-CH 60V 0.115A SC70-6
- Stock
- 29,649
- In Stock :
- 29,649
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Turn On Delay Time :
- 5.85 ns
- Drain to Source Voltage (Vdss) :
- 60V
- Nominal Vgs :
- 1.76 V
- Contact Plating :
- Tin
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Threshold Voltage :
- 1.76V
- Max Power Dissipation :
- 200mW
- Published :
- 2008
- Current - Continuous Drain (Id) @ 25°C :
- 115mA
- Drain to Source Breakdown Voltage :
- 78V
- Gate to Source Voltage (Vgs) :
- 20V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 6
- Radiation Hardening :
- No
- Length :
- 2mm
- Max Junction Temperature (Tj) :
- 150°C
- FET Type :
- 2 N-Channel (Dual)
- Continuous Drain Current (ID) :
- 115mA
- Turn-Off Delay Time :
- 12.5 ns
- Max Operating Temperature :
- 150°C
- Supplier Device Package :
- SC-88 (SC-70-6)
- Number of Elements :
- 2
- Power Dissipation :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Element Configuration :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 28mg
- Power - Max :
- 200mW
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- FET Feature :
- Logic Level Gate
- Drain to Source Resistance :
- 2Ohm
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Width :
- 1.25mm
- Height :
- 1.1mm
- Input Capacitance :
- 50pF
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Lead Free :
- Lead Free
- Resistance :
- 7.5Ohm
- Number of Channels :
- 2
- RoHS Status :
- ROHS3 Compliant
- Rds On Max :
- 7.5 Ω
- Rds On (Max) @ Id, Vgs :
- 7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Datasheets
- 2N7002DW

2N7002DW datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
:
The 2N7002 is a Logic Level N-channel MOSFET with a vertical DMOS structure and a well-proven silicon-gate manufacturing method that operates at low voltage and low current. This combination results in a device that combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free of thermal runaway and thermally induced secondary breakdown, as is typical of all MOS architectures. Vertical DMOS FETs from Microchip are perfect for a variety of switching and amplifying applications that require a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds. It is useful in power management applications due to its low on-state resistance and low input capacitance. The MOSFET can be easily controlled by 3.3V or 5V system voltage since it has low threshold voltage.
2N7002DW Features
:
? Dual N-Channel MOSFET
? Low On-Resistance
? Low Gate Threshold Voltage
? Low Input Capacitance
? Fast Switching Speed
? Low Input/Output Leakage
? Ultra-Small Surface Mount Package
? Lead Free/RoHS Compliant
2N7002DW Applications
:
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
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