2N7002DW
- Mfr.Part #
- 2N7002DW
- Manufacturer
- YANGJIE
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- SOT-363 N 60V 0.34A Transistors
- Stock
- 37,387
- In Stock :
- 37,387
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 115mA
- Power - Max :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- REACH SVHC :
- No SVHC
- Input Capacitance :
- 50pF
- Max Junction Temperature (Tj) :
- 150°C
- Width :
- 1.25mm
- Drain to Source Voltage (Vdss) :
- 60V
- Nominal Vgs :
- 1.76 V
- Drain to Source Breakdown Voltage :
- 78V
- Number of Channels :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 115mA
- Supplier Device Package :
- SC-88 (SC-70-6)
- Turn On Delay Time :
- 5.85 ns
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 6
- Max Operating Temperature :
- 150°C
- Length :
- 2mm
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Drain to Source Resistance :
- 2Ohm
- Resistance :
- 7.5Ohm
- Published :
- 2008
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 200mW
- Turn-Off Delay Time :
- 12.5 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Weight :
- 28mg
- Rds On Max :
- 7.5 Ω
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Height :
- 1.1mm
- Threshold Voltage :
- 1.76V
- FET Type :
- 2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs :
- 7.5Ohm @ 50mA, 5V
- Element Configuration :
- Dual
- Max Power Dissipation :
- 200mW
- FET Feature :
- Logic Level Gate
- Mounting Type :
- Surface Mount
- Number of Elements :
- 2
- Mount :
- Surface Mount
- Datasheets
- 2N7002DW
2N7002DW datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
:
The 2N7002 is a Logic Level N-channel MOSFET with a vertical DMOS structure and a well-proven silicon-gate manufacturing method that operates at low voltage and low current. This combination results in a device that combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free of thermal runaway and thermally induced secondary breakdown, as is typical of all MOS architectures. Vertical DMOS FETs from Microchip are perfect for a variety of switching and amplifying applications that require a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds. It is useful in power management applications due to its low on-state resistance and low input capacitance. The MOSFET can be easily controlled by 3.3V or 5V system voltage since it has low threshold voltage.
2N7002DW Features
:
? Dual N-Channel MOSFET
? Low On-Resistance
? Low Gate Threshold Voltage
? Low Input Capacitance
? Fast Switching Speed
? Low Input/Output Leakage
? Ultra-Small Surface Mount Package
? Lead Free/RoHS Compliant
2N7002DW Applications
:
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
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