2N7002DW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current Rating :

115mA

Dual Supply Voltage :

60V

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Resistance :

7.5Ohm

Mounting Type :

Surface Mount

Turn On Delay Time :

7 ns

FET Feature :

Standard

Radiation Hardening :

No

Max Power Dissipation :

200mW

Continuous Drain Current (ID) :

115mA

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Transistor Application :

SWITCHING

Number of Pins :

6

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

2V

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

High Reliability

Number of Channels :

2

Turn-Off Delay Time :

11 ns

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Weight :

6.010099mg

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

0.115A

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 50mA, 5V

Feedback Cap-Max (Crss) :

5 pF

Current - Continuous Drain (Id) @ 25°C :

230mA

Mount :

Surface Mount

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

6

Factory Lead Time :

20 Weeks

Drain to Source Breakdown Voltage :

70V

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Terminations :

6

Termination :

SMD/SMT

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

2V @ 250μA

Width :

1.35mm

Power Dissipation :

200mW

Published :

2007

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

2

Power - Max :

310mW

Nominal Vgs :

2 V

Voltage - Rated DC :

60V

Length :

2.2mm

Height :

1mm

Contact Plating :

Tin

Transistor Element Material :

SILICON