2N7002
- Mfr.Part #
- 2N7002
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 N 60V 0.34A Transistors
- Stock
- 13,115
- In Stock :
- 13,115
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 8 Weeks
- Element Configuration :
- Single
- Drain to Source Resistance :
- 1.2Ohm
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 115mA
- Dual Supply Voltage :
- 60V
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 5.3Ohm
- Rds On Max :
- 7.5 Ω
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Operating Temperature :
- 150°C
- Nominal Vgs :
- 2.1 V
- Length :
- 2.92mm
- Height :
- 930μm
- Mount :
- Surface Mount
- Voltage :
- 60V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Input Capacitance :
- 50pF
- Supplier Device Package :
- SOT-23 (TO-236AB)
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 60V
- Drain to Source Voltage (Vdss) :
- 60V
- Power Dissipation-Max :
- 200mW Ta
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Width :
- 3.05mm
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Ta
- Contact Plating :
- Tin
- Power Dissipation :
- 200mW
- Base Part Number :
- 2N7002
- Min Operating Temperature :
- -55°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Current :
- 115mA
- Drain to Source Breakdown Voltage :
- 60V
- Threshold Voltage :
- 2.1V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 115mA
- Rds On (Max) @ Id, Vgs :
- 7.5Ohm @ 500mA, 10V
- Published :
- 2016
- Datasheets
- 2N7002
N-Channel Tape & Reel (TR) 7.5Ohm @ 500mA, 10V ±20V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
2N7002 Description
2N7002 is a N-channel enhanced FET, which is produced by high cell density and DMOS process. The product minimizes on-resistance and provides durable, reliable and fast switching performance. It can be used in most applications that require up to 400 mA DC and can provide pulse currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control or power MOSFET gate drivers.
2N7002 Features
High density battery design for very low RDS (ON)
High saturation current capacity
Voltage controlled small signal switch
Solid and reliable
2N7002 Application
Power management
motor drive and control
audio
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