2N5686G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

5V @ 10A, 50A

Base Part Number :

2N5686

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Package / Case :

TO-204AE

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 25A 2V

Max Power Dissipation :

300W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Power Dissipation :

300W

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Terminations :

2

Current - Collector Cutoff (Max) :

1mA

Terminal Position :

BOTTOM

Transistor Application :

SWITCHING

Frequency :

2MHz

Transition Frequency :

2MHz

hFE Min :

15

Element Configuration :

Single

Collector Emitter Saturation Voltage :

1V

Case Connection :

COLLECTOR

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

50A

Voltage - Rated DC :

80V

Collector Emitter Breakdown Voltage :

80V

Width :

26.67mm

Pin Count :

2

Transistor Element Material :

SILICON

Number of Elements :

1

Collector Base Voltage (VCBO) :

80V

Emitter Base Voltage (VEBO) :

5V

Height :

8.51mm

Polarity/Channel Type :

NPN

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Type :

NPN

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

No

Operating Temperature :

-65°C~200°C TJ

Number of Pins :

2

Length :

38.86mm

REACH SVHC :

No SVHC

Current Rating :

50A

Packaging :

Tray

ECCN Code :

EAR99

Published :

2006

Factory Lead Time :

2 Weeks

Collector Emitter Voltage (VCEO) :

80V

Radiation Hardening :

No

Terminal Form :

PIN/PEG

Gain Bandwidth Product :

2MHz