2N5606

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Mfr.Part #
2N5606
Manufacturer
Microchip Technology
Package / Case
TO-213AA, TO-66-2
Datasheet
Download
Description
POWER BJT
Stock
46,950
In Stock :
46,950

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Product Type :
BJTs - Bipolar Transistors
Power - Max :
25 W
Transistor Polarity :
NPN
Surface Mount :
No
Current - Collector (Ic) (Max) :
5 A
Current - Collector Cutoff (Max) :
-
Package :
Bulk
Number of Terminals :
2
Technology :
Si
Supplier Device Package :
TO-66 (TO-213AA)
Operating Temperature :
-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 500μA, 2.5mA
Power Dissipation-Max (Abs) :
25 W
Number of Elements :
1
Collector Current-Max (IC) :
5 A
Reach Compliance Code :
Unknown
Transistor Type :
NPN
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
Configuration :
Single
Product Category :
Bipolar Transistors - BJT
Package Shape :
Round
Case Connection :
COLLECTOR
JEDEC-95 Code :
TO-66
Brand :
Microchip Technology
Series :
-
Voltage - Collector Emitter Breakdown (Max) :
60 V
Frequency - Transition :
-
Polarity/Channel Type :
NPN
Manufacturer :
Microchip
VCEsat-Max :
0.5 V
Transistor Element Material :
SILICON
Terminal Form :
PIN/PEG
Product Status :
Active
Package / Case :
TO-213AA, TO-66-2
Terminal Position :
BOTTOM
JESD-30 Code :
O-MBFM-P2
DC Current Gain-Min (hFE) :
70
Subcategory :
Transistors
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Collector-Emitter Voltage-Max :
60 V
Datasheets
2N5606
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5606 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C ~ 200°C (TJ), Mounting Type:Through Hole, Package / Case:TO-213AA, TO-66-2, 2N5606 pinout, 2N5606 datasheet PDF, 2N5606 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5606 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-213AA, TO-66-2 Through Hole

2N5606 Overview


In this device, the DC current gain is -, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500μA, 2.5mA.Product comes in the supplier's device package TO-66 (TO-213AA).60 V is set as the maximum collector-emitter voltage.There is a 60 V maximal voltage in the device due to collector-emitter breakdown.

2N5606 Features


the DC current gain for this device is -
the vce saturation(Max) is 1.5V @ 500μA, 2.5mA
the supplier device package of TO-66 (TO-213AA)


2N5606 Applications


There are a lot of Microchip Technology
2N5606 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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