2N5608

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Mfr.Part #
2N5608
Manufacturer
Microchip Technology
Package / Case
TO-213AA, TO-66-2
Datasheet
Download
Description
POWER BJT
Stock
33,921
In Stock :
33,921

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Series :
-
Product Status :
Active
VCEsat-Max :
0.5 V
Surface Mount :
No
Power - Max :
25 W
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Product Type :
BJTs - Bipolar Transistors
JESD-30 Code :
O-MBFM-P2
Collector Current-Max (IC) :
5 A
Power Dissipation-Max (Abs) :
25 W
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 500μA, 2.5mA
Reach Compliance Code :
Unknown
Manufacturer :
Microchip
Polarity/Channel Type :
NPN
Current - Collector (Ic) (Max) :
5 A
Configuration :
Single
Transistor Application :
SWITCHING
Terminal Position :
BOTTOM
Supplier Device Package :
TO-66 (TO-213AA)
Transistor Type :
PNP
Terminal Form :
PIN/PEG
Package Shape :
Round
Transistor Element Material :
SILICON
Case Connection :
COLLECTOR
Package :
Bulk
Number of Elements :
1
Subcategory :
Transistors
Brand :
Microchip Technology
Voltage - Collector Emitter Breakdown (Max) :
80 V
Operating Temperature :
-65°C ~ 200°C (TJ)
Frequency - Transition :
-
Number of Terminals :
2
Current - Collector Cutoff (Max) :
-
Technology :
Si
DC Current Gain-Min (hFE) :
30
JEDEC-95 Code :
TO-66
Collector-Emitter Voltage-Max :
80 V
Mounting Type :
Through Hole
Transistor Polarity :
PNP
Product Category :
Bipolar Transistors - BJT
Package / Case :
TO-213AA, TO-66-2
Datasheets
2N5608
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5608 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C ~ 200°C (TJ), Mounting Type:Through Hole, Package / Case:TO-213AA, TO-66-2, 2N5608 pinout, 2N5608 datasheet PDF, 2N5608 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5608 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-213AA, TO-66-2 Through Hole

2N5608 Overview


In this device, the DC current gain is -, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500μA, 2.5mA.Product comes in the supplier's device package TO-66 (TO-213AA).80 V is set as the maximum collector-emitter voltage.There is a 80 V maximal voltage in the device due to collector-emitter breakdown.

2N5608 Features


the DC current gain for this device is -
the vce saturation(Max) is 1.5V @ 500μA, 2.5mA
the supplier device package of TO-66 (TO-213AA)


2N5608 Applications


There are a lot of Microchip Technology
2N5608 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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