2N5610

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Polarity :

NPN

Subcategory :

Transistors

Collector Current-Max (IC) :

5 A

Polarity/Channel Type :

NPN

Collector-Emitter Voltage-Max :

80 V

Transistor Application :

AMPLIFIER

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 500μA, 2.5mA

Package Shape :

Round

Surface Mount :

No

Series :

-

Case Connection :

COLLECTOR

Operating Temperature :

-65°C ~ 200°C (TJ)

Transistor Element Material :

SILICON

JESD-30 Code :

O-MBFM-P2

Product Type :

BJTs - Bipolar Transistors

Current - Collector Cutoff (Max) :

-

Manufacturer :

Microchip

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

DC Current Gain-Min (hFE) :

70

Number of Elements :

1

Supplier Device Package :

TO-66 (TO-213AA)

Configuration :

Single

Power Dissipation-Max (Abs) :

25 W

Package / Case :

TO-213AA, TO-66-2

Current - Collector (Ic) (Max) :

5 A

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Terminal Form :

PIN/PEG

Power - Max :

25 W

JEDEC-95 Code :

TO-66

Number of Terminals :

2

Technology :

Si

Brand :

Microchip Technology / Atmel

Product Status :

Active

Package :

Bulk

Transistor Type :

PNP

VCEsat-Max :

1.5 V

Terminal Position :

BOTTOM

Voltage - Collector Emitter Breakdown (Max) :

80 V

Frequency - Transition :

-

Product Category :

Bipolar Transistors - BJT