2N5682E3

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Reach Compliance Code :

Compliant

Current - Collector (Ic) (Max) :

10 µA

RoHS :

Details

Package :

Bulk

DC Current Gain-Min (hFE) :

5

HTS Code :

8541.29.00.95

Current - Collector Cutoff (Max) :

10μA

Continuous Collector Current :

1 A

Product Status :

Active

Power - Max :

1 W

Operating Temperature :

-65°C ~ 200°C (TJ)

Series :

-

Surface Mount :

No

Mounting Type :

Through Hole

Supplier Device Package :

TO-5

JESD-30 Code :

O-MBCY-W3

Configuration :

Single

Number of Elements :

1

JEDEC-95 Code :

TO-5

Frequency - Transition :

30MHz

Mounting Style :

Through Hole

Voltage - Collector Emitter Breakdown (Max) :

120 V

Maximum Operating Temperature :

+ 200 C

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 250mA, 2V

Transistor Element Material :

SILICON

Package Shape :

Round

Terminal Position :

BOTTOM

Polarity/Channel Type :

NPN

Transistor Polarity :

NPN

Terminal Form :

Wire

Collector Current-Max (IC) :

1 A

Minimum Operating Temperature :

- 65 C

Package / Case :

TO-39-3

Collector-Emitter Voltage-Max :

120 V

Number of Terminals :

3

Transistor Application :

SWITCHING