2N5680

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e0

Terminal Form :

Wire

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2002

Operating Temperature :

-65°C~200°C TJ

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

120V

JEDEC-95 Code :

TO-5

Terminal Position :

BOTTOM

Emitter Base Voltage (VEBO) :

4V

Current :

1A

Contact Plating :

Lead, Tin

Transistor Element Material :

SILICON

Max Power Dissipation :

1W

RoHS Status :

Non-RoHS Compliant

Factory Lead Time :

12 Weeks

Terminal Finish :

TIN LEAD

Collector Emitter Breakdown Voltage :

120V

Collector Base Voltage (VCBO) :

120V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Package / Case :

TO-205AD, TO-39-3 Metal Can

Current - Collector Cutoff (Max) :

10μA

ECCN Code :

EAR99

Number of Elements :

1

Power Dissipation :

1W

Transistor Application :

SWITCHING

Polarity/Channel Type :

PNP

Number of Pins :

3

Voltage :

120V

Qualification Status :

Not Qualified

Transistor Type :

PNP

Max Collector Current :

1A

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Transition Frequency :

30MHz

Number of Terminations :

3

Configuration :

Single

Mount :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 250mA 2V

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Pbfree Code :

No