2N5667
- Mfr.Part #
- 2N5667
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 300V 5A TO5
- Stock
- 40,361
- In Stock :
- 40,361
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- JEDEC-95 Code :
- TO-5
- Collector-Emitter Voltage-Max :
- 300 V
- ECCN Code :
- EAR99
- Subcategory :
- Tools
- Current - Collector Cutoff (Max) :
- 200nA
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Brand :
- TE Connectivity / AMP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A, 5V
- Max Operating Temperature :
- 200 °C
- Number of Elements :
- 1
- DC Current Gain-Min (hFE) :
- 10
- JESD-30 Code :
- O-MBCY-W3
- Voltage - Collector Emitter Breakdown (Max) :
- 300 V
- Power - Max :
- 1.2 W
- Package Shape :
- Round
- Product Status :
- Active
- Power Dissipation-Max (Abs) :
- 15 W
- Product Category :
- Bench Top Tools
- Packaging :
- Bulk
- Transistor Type :
- NPN
- Pbfree Code :
- No
- Product Type :
- Bench Top Tools
- Manufacturer :
- TE Connectivity
- Series :
- -
- Base Product Number :
- 2N5667
- Collector Base Voltage (VCBO) :
- 400 V
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Max Power Dissipation :
- 1.2 W
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Reach Compliance Code :
- not_compliant
- HTS Code :
- 8541.29.00.95
- Supplier Device Package :
- TO-5
- Configuration :
- Single
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Number of Terminals :
- 3
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 300 V
- Contact Plating :
- Lead, Tin
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- Production (Last Updated: 2 months ago)
- Schedule B :
- 8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080
- Package :
- Bulk
- Current - Collector (Ic) (Max) :
- 5 A
- Min Operating Temperature :
- -65 °C
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1A, 5A
- RoHS :
- Compliant
- Max Collector Current :
- 5 A
- Collector Current-Max (IC) :
- 5 A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- Wire
- Frequency - Transition :
- -
- Datasheets
- 2N5667

NPN -65°C ~ 200°C (TJ) 200nA 1 Elements SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
2N5667 Overview
This device has a DC current gain of 25 @ 1A, 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-5.Maximum collector-emitter voltage can be set to 300 V.Detection of Collector Emitter Breakdown at 300 V maximal voltage is present.The maximum collector current is 5 A volts.
2N5667 Features
the DC current gain for this device is 25 @ 1A, 5V
the vce saturation(Max) is 1V @ 1A, 5A
the supplier device package of TO-5
2N5667 Applications
There are a lot of Microchip
2N5667 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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