2N5660U3
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- Mfr.Part #
- 2N5660U3
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 34,598
- In Stock ：
- 34,598
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Power - Max :
- 2 W
- Package :
- Bulk
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 400mA, 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA, 5V
- Package / Case :
- 3-SMD, No Lead
- Current - Collector (Ic) (Max) :
- 2 A
- Transistor Type :
- NPN
- Product Type :
- BJTs - Bipolar Transistors
- Product Category :
- Bipolar Transistors - BJT
- Brand :
- Microchip Technology
- Frequency - Transition :
- -
- Subcategory :
- Transistors
- Manufacturer :
- Microchip
- Supplier Device Package :
- U3
- Voltage - Collector Emitter Breakdown (Max) :
- 200 V
- Product Status :
- Active
- Current - Collector Cutoff (Max) :
- 200nA
- Series :
- -
- Datasheets
- 2N5660U3
NPN -65°C ~ 200°C (TJ) 200nA 3-SMD, No Lead Surface Mount
2N5660U3 Overview
In this device, the DC current gain is 40 @ 500mA, 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 400mA, 2A.Product comes in the supplier's device package U3.There is a 200 V maximal voltage in the device due to collector-emitter breakdown.
2N5660U3 Features
the DC current gain for this device is 40 @ 500mA, 5V
the vce saturation(Max) is 800mV @ 400mA, 2A
the supplier device package of U3
2N5660U3 Applications
There are a lot of Microchip Technology
2N5660U3 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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