2N5657G
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- Mfr.Part #
- 2N5657G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A TO126
- Stock
- 1,209
- In Stock ：
- 1,209
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 10MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Halogen Free :
- Halogen Free
- Current Rating :
- 3.7A
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100μA
- Voltage - Rated DC :
- 250V
- Weight :
- 4.535924g
- Width :
- 6.35mm
- Operating Temperature :
- -65°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 375V
- hFE Min :
- 30
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 350V
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Frequency :
- 10MHz
- Emitter Base Voltage (VEBO) :
- 6V
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Base Part Number :
- 2N5657
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 20W
- Number of Elements :
- 1
- Package / Case :
- TO-225AA, TO-126-3
- Power Dissipation :
- 20W
- Radiation Hardening :
- No
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 100mA 10V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 2 Weeks
- Transition Frequency :
- 10MHz
- Vce Saturation (Max) @ Ib, Ic :
- 10V @ 100mA, 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Published :
- 2005
- Packaging :
- Bulk
- Height :
- 6.35mm
- Collector Emitter Saturation Voltage :
- 1V
- Lead Free :
- Lead Free
- Length :
- 31.75mm
- Collector Emitter Voltage (VCEO) :
- 350V
- Pin Count :
- 3
- Max Collector Current :
- 500mA
- Datasheets
- 2N5657G
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NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2N5657G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 100mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 10V @ 100mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 3.7A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 10MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2N5657G Features
the DC current gain for this device is 30 @ 100mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 10V @ 100mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 3.7A
a transition frequency of 10MHz
2N5657G Applications
There are a lot of ON Semiconductor
2N5657G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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