2N5657
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- Mfr.Part #
- 2N5657
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN PWR 0.5A 350V TO225AA
- Stock
- 32,296
- In Stock ：
- 32,296
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Saturation Voltage :
- 1V
- Surface Mount :
- No
- Max Collector Current :
- 500mA
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Length :
- 31.75mm
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Current Rating :
- 3.7A
- Collector Emitter Breakdown Voltage :
- 350V
- JESD-609 Code :
- e3
- Packaging :
- Bulk
- Power Dissipation :
- 20W
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 10V @ 100mA, 500mA
- Height :
- 6.35mm
- Base Part Number :
- 2N5657
- Width :
- 6.35mm
- Emitter Base Voltage (VEBO) :
- 6V
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Weight :
- 4.535924g
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 20W
- Voltage - Rated DC :
- 250V
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 10MHz
- Current - Collector Cutoff (Max) :
- 100μA
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 100mA 10V
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 375V
- Transition Frequency :
- 10MHz
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Published :
- 2005
- Halogen Free :
- Halogen Free
- Frequency :
- 10MHz
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 350V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 2 Weeks
- hFE Min :
- 30
- Operating Temperature :
- -65°C~150°C TJ
- Datasheets
- 2N5657
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NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2N5657G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 100mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 10V @ 100mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 3.7A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 10MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2N5657G Features
the DC current gain for this device is 30 @ 100mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 10V @ 100mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 3.7A
a transition frequency of 10MHz
2N5657G Applications
There are a lot of ON Semiconductor
2N5657G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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