2N5655G
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- Mfr.Part #
- 2N5655G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 250V 0.5A TO126
- Stock
- 4,594
- In Stock ：
- 4,594
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 100mA 10mV
- Supplier Device Package :
- TO-225AA
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 500mA
- Frequency - Transition :
- 10MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 250V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 20W
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Operating Temperature :
- -65°C~150°C TJ
- Package / Case :
- TO-225AA, TO-126-3
- Vce Saturation (Max) @ Ib, Ic :
- 10V @ 100mA, 500mA
- Datasheets
- 2N5655G
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NPN -65°C~150°C TJ 100μA TO-225AA, TO-126-3 Bulk Through Hole
2N5655G Overview
This device has a DC current gain of 30 @ 100mA 10mV, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-225AA.Detection of Collector Emitter Breakdown at 250V maximal voltage is present.
2N5655G Features
the DC current gain for this device is 30 @ 100mA 10mV
the vce saturation(Max) is 10V @ 100mA, 500mA
the supplier device package of TO-225AA
2N5655G Applications
There are a lot of Rochester Electronics, LLC
2N5655G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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