2N5617
- Mfr.Part #
- 2N5617
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 2,145
- In Stock :
- 2,145
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Brand :
- Microchip Technology / Atmel
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Configuration :
- Single
- VCEsat-Max :
- 0.5 V
- Collector-Emitter Voltage-Max :
- 80 V
- Current - Collector (Ic) (Max) :
- 5 A
- Terminal Form :
- PIN/PEG
- Package Shape :
- Round
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Surface Mount :
- No
- DC Current Gain-Min (hFE) :
- 70
- Vce Saturation (Max) @ Ib, Ic :
- -
- Number of Terminals :
- 2
- Operating Temperature :
- -
- Package / Case :
- TO-204AA, TO-3
- Polarity/Channel Type :
- PNP
- Product Type :
- BJTs - Bipolar Transistors
- Supplier Device Package :
- TO-204AD (TO-3)
- Frequency - Transition :
- -
- Technology :
- Si
- Current - Collector Cutoff (Max) :
- -
- Collector Current-Max (IC) :
- 5 A
- Terminal Position :
- BOTTOM
- Product Status :
- Active
- Package :
- Bulk
- Series :
- -
- Manufacturer :
- Microchip
- Subcategory :
- Transistors
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Power Dissipation-Max (Abs) :
- 50 W
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Power - Max :
- 58 W
- Case Connection :
- COLLECTOR
- Product Category :
- Bipolar Transistors - BJT
- Transistor Polarity :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- JEDEC-95 Code :
- TO-3
- JESD-30 Code :
- O-MBFM-P2
- Datasheets
- 2N5617
PNP - - 1 Elements SILICON PNP TO-204AA, TO-3 Through Hole
2N5617 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is -.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is -.The product comes in the supplier device package of TO-204AD (TO-3).There is a setting of 80 V for maximal collector-Emitter voltage.A 80 V maximal voltage - Collector Emitter Breakdown is present in the device.
2N5617 Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-204AD (TO-3)
2N5617 Applications
There are a lot of Microchip Technology
2N5617 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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