2N5089TAR
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- Mfr.Part #
- 2N5089TAR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.1A TO92-3
- Stock
- 6,251
- In Stock ：
- 6,251
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 100μA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Current - Collector (Ic) (Max) :
- 100mA
- Supplier Device Package :
- TO-92-3
- Power - Max :
- 625mW
- Frequency - Transition :
- 50MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Base Part Number :
- 2N5089
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Datasheets
- 2N5089TAR
NPN -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5089TAR Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 400 @ 100μA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1mA, 10mA.The product comes in the supplier device package of TO-92-3.A 25V maximal voltage - Collector Emitter Breakdown is present in the device.
2N5089TAR Features
the DC current gain for this device is 400 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
the supplier device package of TO-92-3
2N5089TAR Applications
There are a lot of ON Semiconductor
2N5089TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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