2N5089

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Published :

2012

Emitter Base Voltage (VEBO) :

4.5V

Max Collector Current :

50mA

Collector Base Voltage (VCBO) :

30V

Mount :

Through Hole

JEDEC-95 Code :

TO-92

Package / Case :

TO-226-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

8 Weeks

HTS Code :

8541.21.00.95

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Collector Emitter Breakdown Voltage :

25V

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Elements :

1

Collector Emitter Saturation Voltage :

500mV

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Gain Bandwidth Product :

50MHz

Power Dissipation-Max :

625mW

DC Current Gain-Min (hFE) :

400

Max Operating Temperature :

150°C

JESD-30 Code :

O-PBCY-T3

Collector Emitter Voltage (VCEO) :

500mV

Qualification Status :

Not Qualified

Transition Frequency :

50MHz

Min Operating Temperature :

-65°C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Collector Current :

50mA

Frequency - Transition :

50MHz

Polarity :

NPN

Terminal Position :

BOTTOM

Pbfree Code :

No

Pin Count :

3

JESD-609 Code :

e0

Additional Feature :

LOW NOISE