2N5088TAR

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

5.2mm

Gain Bandwidth Product :

50MHz

Weight :

240mg

Collector Emitter Saturation Voltage :

500mV

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Current - Collector Cutoff (Max) :

50nA ICBO

Published :

2001

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1mA, 10mA

Radiation Hardening :

No

Height :

5.33mm

Pbfree Code :

yes

Number of Pins :

3

Max Power Dissipation :

625mW

ECCN Code :

EAR99

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 100μA 5V

Transistor Type :

NPN

Polarity/Channel Type :

NPN

Terminal Position :

BOTTOM

Transition Frequency :

50MHz

Max Breakdown Voltage :

30V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Max Collector Current :

100mA

Frequency :

50MHz

Width :

4.19mm

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Base Part Number :

2N5088

Collector Emitter Breakdown Voltage :

30V

Voltage - Rated DC :

30V

hFE Min :

300

Lead Free :

Lead Free

Current Rating :

100mA

Factory Lead Time :

6 Weeks

Emitter Base Voltage (VEBO) :

4.5V

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

30V

Contact Plating :

Tin

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

35V

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Packaging :

Tape and Box (TB)

Power Dissipation :

625mW