2N5088TAR

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Lead Free :

Lead Free

Max Collector Current :

100mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Collector Emitter Breakdown Voltage :

30V

Weight :

240mg

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

50nA ICBO

Power Dissipation :

625mW

Base Part Number :

2N5088

Max Power Dissipation :

625mW

Element Configuration :

Single

Current Rating :

100mA

Polarity/Channel Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1mA, 10mA

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

35V

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 100μA 5V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Length :

5.2mm

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

NPN

ECCN Code :

EAR99

Packaging :

Tape and Box (TB)

Collector Emitter Voltage (VCEO) :

30V

Height :

5.33mm

Voltage - Rated DC :

30V

Number of Elements :

1

Transition Frequency :

50MHz

Pbfree Code :

yes

Frequency :

50MHz

Number of Terminations :

3

Mounting Type :

Through Hole

Published :

2001

RoHS Status :

RoHS Compliant

Terminal Position :

BOTTOM

Max Breakdown Voltage :

30V

Width :

4.19mm

hFE Min :

300

Transistor Application :

AMPLIFIER

Collector Emitter Saturation Voltage :

500mV

Factory Lead Time :

6 Weeks

Emitter Base Voltage (VEBO) :

4.5V

Gain Bandwidth Product :

50MHz

Number of Pins :

3

Contact Plating :

Tin