2N5088_D81Z
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- Mfr.Part #
- 2N5088_D81Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A TO92-3
- Stock
- 26,675
- In Stock ：
- 26,675
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 100mA
- Frequency - Transition :
- 50MHz
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Base Part Number :
- 2N5088
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Power - Max :
- 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100μA 5V
- Datasheets
- 2N5088_D81Z
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) Tape & Reel (TR) Through Hole
2N5088_D81Z Overview
In this device, the DC current gain is 300 @ 100μA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 1mA, 10mA.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
2N5088_D81Z Features
the DC current gain for this device is 300 @ 100μA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
2N5088_D81Z Applications
There are a lot of ON Semiconductor
2N5088_D81Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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