2N5087TAR
- Mfr.Part #
- 2N5087TAR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A TO92-3
- Stock
- 27,042
- In Stock :
- 27,042
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector (Ic) (Max) :
- 100mA
- Base Part Number :
- 2N5087
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Current - Collector Cutoff (Max) :
- 50nA
- Packaging :
- Tape and Box (TB)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Power - Max :
- 625mW
- Supplier Device Package :
- TO-92-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 40MHz
- Datasheets
- 2N5087TAR

PNP -55°C~150°C TJ 50nA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5087TAR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100μA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 1mA, 10mA.TO-92-3 is the supplier device package for this product.This device displays a 50V maximum voltage - Collector Emitter Breakdown.
2N5087TAR Features
the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the supplier device package of TO-92-3
2N5087TAR Applications
There are a lot of ON Semiconductor
2N5087TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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