2N5087RLRAG
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- Mfr.Part #
- 2N5087RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.05A TO92
- Stock
- 1,364
- In Stock ：
- 1,364
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 40MHz
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Power - Max :
- 625mW
- Supplier Device Package :
- TO-92-3
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Current - Collector (Ic) (Max) :
- 50mA
- Datasheets
- 2N5087RLRAG
PNP -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5087RLRAG Overview
In this device, the DC current gain is 250 @ 100μA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 1mA, 10mA.Product comes in the supplier's device package TO-92-3.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
2N5087RLRAG Features
the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the supplier device package of TO-92-3
2N5087RLRAG Applications
There are a lot of Rochester Electronics, LLC
2N5087RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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