2N5087RLRA
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- Mfr.Part #
- 2N5087RLRA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.05A TO92
- Stock
- 25,867
- In Stock ：
- 25,867
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Power - Max :
- 625mW
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- TO-92-3
- RoHS Status :
- Non-RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Frequency - Transition :
- 40MHz
- Current - Collector (Ic) (Max) :
- 50mA
- Transistor Type :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2N5087RLRA
PNP -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5087RLRA Overview
In this device, the DC current gain is 250 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 1mA, 10mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 50V.
2N5087RLRA Features
the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the supplier device package of TO-92-3
2N5087RLRA Applications
There are a lot of Rochester Electronics, LLC
2N5087RLRA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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