2N5087G
- Mfr.Part #
- 2N5087G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.05A TO92
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transition Frequency :
- 40MHz
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Weight :
- 4.535924g
- Voltage - Rated DC :
- -50V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Height :
- 5.33mm
- hFE Min :
- 250
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 50mA
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 625mW
- Current Rating :
- -50mA
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 50V
- Base Part Number :
- 2N5087
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Width :
- 4.19mm
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 40MHz
- Emitter Base Voltage (VEBO) :
- 3V
- Collector Emitter Saturation Voltage :
- 300mV
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- RoHS Status :
- RoHS Compliant
- REACH SVHC :
- No SVHC
- Length :
- 5.2mm
- Frequency :
- 40MHz
- Published :
- 2006
- Transistor Type :
- PNP
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Radiation Hardening :
- No
- Power Dissipation :
- 625mW
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- No
- Collector Emitter Breakdown Voltage :
- 50V
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2N5087G
2N5087G Documents
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N5087G Overview
This device has a DC current gain of 250 @ 100μA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 3V.This device has a current rating of -50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 40MHz.A maximum collector current of 50mA volts is possible.
2N5087G Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is -50mA
a transition frequency of 40MHz
2N5087G Applications
There are a lot of ON Semiconductor
2N5087G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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