2N5087G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Saturation Voltage :

300mV

Current - Collector Cutoff (Max) :

50nA ICBO

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Height :

5.33mm

Packaging :

Bulk

Width :

4.19mm

Voltage - Rated DC :

-50V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Max Power Dissipation :

625mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 100μA 5V

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Base Part Number :

2N5087

Mounting Type :

Through Hole

hFE Min :

250

Length :

5.2mm

Published :

2006

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pin Count :

3

Collector Emitter Breakdown Voltage :

50V

Surface Mount :

No

ECCN Code :

EAR99

Transition Frequency :

40MHz

Polarity/Channel Type :

PNP

Frequency :

40MHz

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Gain Bandwidth Product :

40MHz

JESD-609 Code :

e1

Power Dissipation :

625mW

Emitter Base Voltage (VEBO) :

3V

Current Rating :

-50mA

Max Collector Current :

50mA

Weight :

4.535924g

Collector Base Voltage (VCBO) :

50V

Transistor Application :

AMPLIFIER

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

50V

Number of Pins :

3

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Number of Elements :

1

Transistor Type :

PNP