2N5087_J61Z
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- Mfr.Part #
- 2N5087_J61Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A TO92-3
- Stock
- 2,695
- In Stock ：
- 2,695
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- Frequency - Transition :
- 40MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 50nA
- Power - Max :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Current - Collector (Ic) (Max) :
- 100mA
- Base Part Number :
- 2N5087
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datasheets
- 2N5087_J61Z
PNP -55°C~150°C TJ 50nA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole
2N5087_J61Z Overview
In this device, the DC current gain is 250 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 1mA, 10mA.The device exhibits a collector-emitter breakdown at 50V.
2N5087_J61Z Features
the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 300mV @ 1mA, 10mA
2N5087_J61Z Applications
There are a lot of ON Semiconductor
2N5087_J61Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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