2N5086TAR
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- Mfr.Part #
- 2N5086TAR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A TO92-3
- Stock
- 25,697
- In Stock ：
- 25,697
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Box (TB)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 625mW
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Base Part Number :
- 2N5086
- Current - Collector (Ic) (Max) :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100μA 5V
- Current - Collector Cutoff (Max) :
- 50nA
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Transistor Type :
- PNP
- Frequency - Transition :
- 40MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheets
- 2N5086TAR
PNP -55°C~150°C TJ 50nA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5086TAR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 100μA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 1mA, 10mA.This device displays a 50V maximum voltage - Collector Emitter Breakdown.
2N5086TAR Features
the DC current gain for this device is 150 @ 100μA 5V
the vce saturation(Max) is 300mV @ 1mA, 10mA
2N5086TAR Applications
There are a lot of ON Semiconductor
2N5086TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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