2N5013S

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Mfr.Part #
2N5013S
Manufacturer
Microsemi
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
TRANS NPN 800V 0.2A TO39
Stock
13,535
In Stock :
13,535

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Manufacturer :
Microsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Series :
Military, MIL-PRF-19500/727
Pin Count :
3
RoHS Status :
Non-RoHS Compliant
Number of Terminations :
3
Configuration :
Single
Polarity/Channel Type :
NPN
Terminal Form :
Wire
Terminal Position :
BOTTOM
JESD-30 Code :
O-MBCY-W3
Current - Collector Cutoff (Max) :
10nA ICBO
Package / Case :
TO-205AD, TO-39-3 Metal Can
Current - Collector (Ic) (Max) :
200mA
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 5mA, 20mA
Surface Mount :
No
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
Not Applicable
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 20mA 10V
Packaging :
Bulk
HTS Code :
8541.29.00.95
Mounting Type :
Through Hole
Power Dissipation-Max (Abs) :
7W
Number of Elements :
1
Operating Temperature :
-65°C~200°C TJ
ECCN Code :
EAR99
Power - Max :
1W
Qualification Status :
Not Qualified
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
800V
Datasheets
2N5013S
Introducing Transistors - Bipolar (BJT) - Single Microsemi 2N5013S from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-205AD, TO-39-3 Metal Can, Mounting Type:Through Hole, Operating Temperature:-65°C~200°C TJ, 2N5013S pinout, 2N5013S datasheet PDF, 2N5013S amp .Beyond Transistors - Bipolar (BJT) - Single Microsemi 2N5013S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microsemi 2N5013S


NPN -65°C~200°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole

2N5013S Overview


This device has a DC current gain of 30 @ 20mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 800V maximal voltage is present.

2N5013S Features


the DC current gain for this device is 30 @ 20mA 10V
the vce saturation(Max) is 1.6V @ 5mA, 20mA


2N5013S Applications


There are a lot of Microsemi Corporation
2N5013S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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