2N5012S

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

200mA

Operating Temperature :

-65°C~200°C TJ

Current - Collector Cutoff (Max) :

10nA ICBO

Number of Terminations :

3

Pin Count :

3

Power - Max :

1W

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 25mA 10V

Polarity/Channel Type :

NPN

Terminal Position :

BOTTOM

Package / Case :

TO-205AD, TO-39-3 Metal Can

Moisture Sensitivity Level (MSL) :

Not Applicable

Mounting Type :

Through Hole

HTS Code :

8541.29.00.95

Transistor Element Material :

SILICON

Surface Mount :

No

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

700V

JESD-30 Code :

O-MBCY-W3

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 5mA, 25mA

Series :

Military, MIL-PRF-19500/727

Configuration :

Single

Packaging :

Bulk

ECCN Code :

EAR99

Transistor Type :

NPN

Terminal Form :

Wire

Power Dissipation-Max (Abs) :

7W

Qualification Status :

Not Qualified