2N3792
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- Mfr.Part #
- 2N3792
- Manufacturer
- Microchip Technology
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO3
- Stock
- 12,105
- In Stock ：
- 12,105
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- --
- Gain Bandwidth Product :
- 4MHz
- Terminal Form :
- PIN/PEG
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 1A, 2V
- Emitter Base Voltage (VEBO) :
- 7V
- Qualification Status :
- Not Qualified
- Pin Count :
- 2
- Published :
- 2003
- Collector Emitter Voltage (VCEO) :
- 1V
- Max Collector Current :
- 10A
- Polarity :
- PNP
- Mounting Type :
- Through Hole
- Packaging :
- Box
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Current - Collector (Ic) (Max) :
- 10A
- Max Operating Temperature :
- 150°C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Series :
- --
- Transistor Type :
- PNP
- JESD-609 Code :
- e0
- Collector Base Voltage (VCBO) :
- 80V
- Supplier Device Package :
- TO-3
- Transition Frequency :
- 4MHz
- Package / Case :
- TO-3
- DC Current Gain-Min (hFE) :
- 30
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Frequency - Transition :
- 4MHz
- hFE Min :
- 50
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 150W
- JESD-30 Code :
- O-MBFM-P2
- Factory Lead Time :
- 12 Weeks
- Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1V
- Collector Emitter Breakdown Voltage :
- 80V
- HTS Code :
- 8541.29.00.95
- Min Operating Temperature :
- -65°C
- Case Connection :
- COLLECTOR
- Power - Max :
- 150W
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- Datasheets
- 2N3792
PNP -65°C ~ 200°C (TJ) -- 1 Elements 2 Terminations TO-3 Box Through Hole
2N3792 Overview
In this device, the DC current gain is 50 @ 1A, 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 500mA, 5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Product comes in the supplier's device package TO-3.There is a 80V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
2N3792 Features
the DC current gain for this device is 50 @ 1A, 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
the supplier device package of TO-3
2N3792 Applications
There are a lot of Central Semiconductor
2N3792 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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