2N3792
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- Mfr.Part #
- 2N3792
- Manufacturer
- Microchip Technology
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO3
- Stock
- 12,105
- In Stock ：
- 12,105
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 1A, 2V
- Supplier Device Package :
- TO-3
- Collector Emitter Voltage (VCEO) :
- 1V
- Mounting Type :
- Through Hole
- Min Operating Temperature :
- -65°C
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 80V
- Max Collector Current :
- 10A
- Transition Frequency :
- 4MHz
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 2
- Frequency - Transition :
- 4MHz
- Case Connection :
- COLLECTOR
- HTS Code :
- 8541.29.00.95
- Power - Max :
- 150W
- Number of Elements :
- 1
- Published :
- 2003
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Factory Lead Time :
- 12 Weeks
- JESD-609 Code :
- e0
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- Transistor Type :
- PNP
- Polarity :
- PNP
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Packaging :
- Box
- Series :
- --
- DC Current Gain-Min (hFE) :
- 30
- Configuration :
- Single
- JESD-30 Code :
- O-MBFM-P2
- hFE Min :
- 50
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 150W
- Current - Collector Cutoff (Max) :
- --
- Current - Collector (Ic) (Max) :
- 10A
- Collector Emitter Breakdown Voltage :
- 80V
- Qualification Status :
- Not Qualified
- Terminal Form :
- PIN/PEG
- Emitter Base Voltage (VEBO) :
- 7V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Operating Temperature :
- 150°C
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 2
- Collector Emitter Saturation Voltage :
- 1V
- Gain Bandwidth Product :
- 4MHz
- Transistor Application :
- SWITCHING
- Datasheets
- 2N3792
2N3792 Documents
PNP -65°C ~ 200°C (TJ) -- 1 Elements 2 Terminations TO-3 Box Through Hole
2N3792 Overview
In this device, the DC current gain is 50 @ 1A, 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 500mA, 5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Product comes in the supplier's device package TO-3.There is a 80V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
2N3792 Features
the DC current gain for this device is 50 @ 1A, 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
the supplier device package of TO-3
2N3792 Applications
There are a lot of Central Semiconductor
2N3792 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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