2N3792
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- Mfr.Part #
- 2N3792
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A TO3
- Stock
- 57
- In Stock ：
- 57
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 10A
- Polarity :
- PNP
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- hFE Min :
- 50
- Terminal Form :
- PIN/PEG
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 1V
- Collector Base Voltage (VCBO) :
- 80V
- Packaging :
- Box
- JESD-30 Code :
- O-MBFM-P2
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 4MHz
- Min Operating Temperature :
- -65°C
- Collector Emitter Saturation Voltage :
- 1V
- RoHS Status :
- RoHS Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- --
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 1A, 2V
- Transition Frequency :
- 4MHz
- Max Operating Temperature :
- 150°C
- Power - Max :
- 150W
- Power Dissipation-Max :
- 150W
- Series :
- --
- Frequency - Transition :
- 4MHz
- Pin Count :
- 2
- HTS Code :
- 8541.29.00.95
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 7V
- Factory Lead Time :
- 12 Weeks
- Package / Case :
- TO-3
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Published :
- 2003
- Supplier Device Package :
- TO-3
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- Max Collector Current :
- 10A
- DC Current Gain-Min (hFE) :
- 30
- Collector Emitter Breakdown Voltage :
- 80V
- Datasheets
- 2N3792
2N3792 Documents
PNP -65°C ~ 200°C (TJ) -- 1 Elements 2 Terminations TO-3 Box Through Hole
2N3792 Overview
In this device, the DC current gain is 50 @ 1A, 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 500mA, 5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Product comes in the supplier's device package TO-3.There is a 80V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
2N3792 Features
the DC current gain for this device is 50 @ 1A, 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
the supplier device package of TO-3
2N3792 Applications
There are a lot of Central Semiconductor
2N3792 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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