2N3773G
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- Mfr.Part #
- 2N3773G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 140V 16A TO204
- Stock
- 980
- In Stock ：
- 980
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Base Part Number :
- 2N3773
- Packaging :
- Tray
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Length :
- 39.37mm
- Number of Terminations :
- 2
- Contact Plating :
- Tin
- Operating Temperature :
- -65°C~200°C TJ
- Max Power Dissipation :
- 150W
- Lead Free :
- Lead Free
- Width :
- 26.67mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 8A 4V
- Current - Collector Cutoff (Max) :
- 10mA
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Pin Count :
- 2
- Terminal Form :
- PIN/PEG
- ECCN Code :
- EAR99
- Current Rating :
- 16A
- Voltage - Rated DC :
- 140V
- Case Connection :
- COLLECTOR
- hFE Min :
- 15
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Collector Emitter Breakdown Voltage :
- 140V
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 160V
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 800mA, 8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 7V
- Height :
- 8.51mm
- Weight :
- 13.607771g
- Terminal Position :
- BOTTOM
- Number of Pins :
- 2
- JESD-609 Code :
- e3
- Published :
- 2004
- Collector Emitter Voltage (VCEO) :
- 140V
- Power Dissipation :
- 150W
- Collector Emitter Saturation Voltage :
- 1.4V
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 10 Weeks
- Package / Case :
- TO-204AA, TO-3
- Max Collector Current :
- 16A
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Datasheets
- 2N3773G
NPN -65°C~200°C TJ 10mA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
2N3773G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 8A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.4V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.4V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 16A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 16A volts.
2N3773G Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 800mA, 8A
the emitter base voltage is kept at 7V
the current rating of this device is 16A
2N3773G Applications
There are a lot of ON Semiconductor
2N3773G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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